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Amir Zjajo

Stochastic Process Variation in Deep-Submicron CMOS


Circuits and Algorithms
Softcover reprint of the original 1st ed. 2014. 2016. xix, 192 S. 46 SW-Abb. 235 mm
Verlag/Jahr: SPRINGER NETHERLANDS; SPRINGER 2016
ISBN: 9402402853 (9402402853)
Neue ISBN: 978-9402402858 (9789402402858)

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This book features a unique combination of mathematical treatment of random process variation, electrical noise and temperature, and circuit realizations for on-chip monitoring and performance calibration. Includes examples and easy to follow procedures.
One of the most notable features of nanometer scale CMOS technology is the increasing magnitude of variability of the key device parameters affecting performance of integrated circuits. The growth of variability can be attributed to multiple factors, including the difficulty of manufacturing control, the emergence of new systematic variation-generating mechanisms, and most importantly, the increase in atomic-scale randomness, where device operation must be described as a stochastic process. In addition to wide-sense stationary stochastic device variability and temperature variation, existence of non-stationary stochastic electrical noise associated with fundamental processes in integrated-circuit devices represents an elementary limit on the performance of electronic circuits.

In an attempt to address these issues, Stochastic Process Variation in Deep-Submicron CMOS: Circuits and Algorithms offers unique combination of mathematical treatment of random process variation, electrical noise and temperature and necessary circuit realizations for on-chip monitoring and performance calibration. The associated problems are addressed at various abstraction levels, i.e. circuit level, architecture level and system level. It therefore provides a broad view on the various solutions that have to be used and their possible combination in very effective complementary techniques for both analog/mixed-signal and digital circuits. The feasibility of the described algorithms and built-in circuitry has been verified by measurements from the silicon prototypes fabricated in standard 90 nm and 65 nm CMOS technology.
1 Introduction.
1.1 Stochastic Process Variations in Deep-Submicron CMOS. 1.2 Remarks on Current Design Practice. 1.3Motivation. 1.4 Organization of the Book.

2. Random Process Variation in Deep-Submicron CMOS.
2.1 Modeling Process Variability. 2.2 Stochastic MNA for Process Variability Analysis. 2.3 Statistical Timing Analysis. 2.4 Yield Constrained Energy Optimization. 2.5 Experimental Results. 2.6 Conclusions.

3 Electronic Noise in Deep-Submicron CMOS.
3.1 Stochastic MNA for Noise Analysis. 3.2 Accuracy Considerations. 3.3 Adaptive Numerical Integration Methods. 3.4 Estimation of the Noise Content Contribution. 3.5 Experimental Results. 3.6 Conclusions.

4 Thermal Effects in Deep-Submicron CMOS.
4.1 Thermal Model. 4.2 Temperature Estimation. 4.3 Reducing Computation Complexity. 4.4 System Level Methodology for Temperature Constrained Power Management. 4.5 Experimental Results. 4.6 Conclusions.

5 Circuit Solutions.
5.1 Architecture of the System. 5.2 Circuits for Active Monitoring of Temperature and Process Variations. 5.3 Characterization of Process Variability Conditions. 5.4 Experimental Results. 5.5 Conclusions.

6 Conclusions and Recommendations.
6.1 Summary of the Results. 6.2 Recommendations and Future Research.

Appendix. References. Acknowledgement. About the Author.