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Actually, there are existing a couple of different dielectric breakdown models which are describing how the dielectric fails. But the key question in this thesis is not how the dielectric will fail, it is how much damage will occur due to a dielectric breakdown in a deep-trench double capacitor. Therefore, the moment of breakdown was investigated and factors which are having an influence to the post breakdown damage are determined. In order to differ between damages, a post breakdown damage classification was done. Moreover, based on the found influencing factors a measurement model was developed. Thereby, the different factors which are having an influence to the post breakdown damage can be changed. In a first step the status quo was determined. Thereby, it was seen that the post breakdown damage can be very huge and a detailed damage analysis is needed. As a result of this in a second step the critical borders when no post breakdown damage occur were determined in order to define a safe sector. Based on this results a safe system was designed and finally verified.

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Napowanez, Wolfram
Wolfram Napowanez studied Information and Communications Engineering at the Alpen-Adria University Klagenfurt. Since 2015, he has been working for Infineon Technologies Austria at the Villach site, where he is responsible for test engineering.

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