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The demand for electric energy is increasing continuously. Power electronics systems are the key elements to perform efficient and versatile energy conversion from the sources to the loads in all voltage and power levels. To improve power efficiency, reduce system costs and overall system size, passive components and semiconductor devices are subject to constant further development. Wide-bandgap semiconductors have particularly been paid attention to due to their high electric field strength, temperature stability and radiation resistivity. This work focuses on the material system AlGaN/GaN-on-Si, which offers wide-bandgap performance at low cost. Additionally, the lateral nature of this material compound enables the integration of complete power electronics topologies on a single die. In Fast-Switching Monolithically Integrated High-Voltage GaN-on-Si Power Converters the author presents two different integrated circuits (ICs) fabricated in a 600V-AlGaN/GaN-on-Si technology. Their operation is demonstrated up to voltage levels of 400 V, switching frequencies up to 5 MHz and power levels up to 900 W. Furthermore, challenges regarding this material system, such as dynamic on-resistance increase resulting from high substrate biases during IC-operation, as well as EMI-issues resulting from fast-switching, high-frequency power conversion are discussed in detail.

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